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RCHIVE INFORMATION
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RF Device Data
Freescale Semiconductor
MRF372R3 MRF372R5
Table 4. Electrical Characteristics
(TC
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Drain--Source Breakdown Voltage
(VGS
=0Vdc,ID
=10
μA)
V(BR)DSS
68
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS
=32Vdc,VGS
=0Vdc)
IDSS
—
—
10
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(1)
(VDS
=10V,ID
= 200
μA)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(2)
(VDS
=32V,ID
= 100 mA)
VGS(Q)
2.5
3.5
4.5
Vdc
Drain--Source On--Voltage
(1)
(VGS
=10V,ID
=3A)
VDS(on)
—
0.28
0.45
Vdc
Forward Transconductance
(VDS
=10V,ID
=3A)
gfs
—
2.6
—
S
Dynamic Characteristics
(1)
Input Capacitance (Includes Input Matching Capacitance)
(VDS
=32V,VGS
=0V,f=1MHz)
Ciss
—
260
—
pF
Output Capacitance
(VDS
=32V,VGS
=0V,f=1MHz)
Coss
—
69
—
pF
Reverse Transfer Capacitance
(VDS
=32V,VGS
=0V,f=1MHz)
Crss
—
2.5
—
pF
Functional Characteristics, Narrowband Operation
(2)
(In Freescale MRF372 Narrowband Circuit, 50 ohm system)
Common Source Power Gain
(VDD
=32V,Pout
= 180 W PEP, IDQ
= 800 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
16
17
—
dB
Drain Efficiency
(VDD
=32V,Pout
= 180 W PEP, IDQ
= 800 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
33
36
—
%
Intermodulation Distortion
(VDD
=32Vdc,Pout
= 180 W PEP, IDQ
= 800 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
-- 3 5
-- 3 1
dBc
Typical Characteristics, Broadband Operation
(2)
(In Freescale MRF372 Broadband Circuit, 50 ohm system)
Common Source Power Gain
(VDD
=32Vdc,Pout
= 180 W PEP, IDQ
= 1000 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
—
14.5
—
dB
Drain Efficiency
(VDD
=32Vdc,Pout
= 180 W PEP, IDQ
= 1000 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
—
37
—
%
Intermodulation Distortion
(VDD
=32Vdc,Pout
= 180 W PEP, IDQ
= 1000 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
-- 3 1
—
dBc
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
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